| PART |
Description |
Maker |
| M470L1713CT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYMD216M646L6-H HYMD216M646L6-K HYMD216M6466-H |
SDRAM|DDR|16MX64|CMOS|DIMM|200PIN|PLASTIC
|
|
| W3EG6432S-D3 W3EG6432S335D3 W3EG6432S403JD3 W3EG64 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WV3EG32M64ETSU335D3MG WV3EG32M64ETSU335D3SG WV3EG3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG6433S335BD4 W3EG6433S202AD4 W3EG6433S202BD4 W3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD564M646BL6-D43 HYMD564M646BL6-H HYMD564M646BL6 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (TSOP)
|
Hynix Semiconductor
|
| M470L3224FT0 M485L1624FT0-CB3 M470L1624FT0 M470L16 |
DDR SDRAM SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMP125S64CR8-C4 HYMP125S64CR8-S5 HYMP125S64CR8-S6 |
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
